Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...
Tech Xplore on MSN
Innovative transistor design offering advantages for controlling and reading quantum chips
The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the ...
Hosted on MSN
Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around design
It is close to impossible to get into a Chinese semiconductor laboratory, but Chinese scientists are inclined to share the results of their work. Thus, our colleagues from TechXplore have found a ...
The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback